Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same

ABSTRACT

A semiconductor device comprises a first transistor having a composite gate structure containing a lamination of a first polycrystalline silicon film, an interlayer insulating film, and a second polycrystalline silicon film; and a second transistor having a single gate structure containing a lamination of a third polycrystalline silicon film and a fourth polycrystalline silicon film, wherein the first polycrystalline silicon film and the third polycrystalline silicon film have substantially the same thickness; the first polycrystalline silicon film and the third polycrystalline silicon film have different impurity concentrations controlled independently of each other; the second polycrystalline silicon film and the fourth polycrystalline silicon film have substantially the same thickness, and the second polycrystalline silicon film, the fourth polycrystalline silicon film, and the third polycrystalline silicon film have substantially the same impurity concentration. Also, a method for manufacturing the above-described semiconductor device is described.

This application is a divisional of U.S. application Ser. No.11/494,296, filed Jul. 27, 2006, now U.S. Pat. No. 7,439,573 which is adivisional of U.S. application Ser. No. 10/725,318, filed Dec. 2, 2003,now U.S. Pat. No. 7,312,496 which is a continuation of U.S. applicationSer. No. 10/118,039, filed Apr. 9, 2002, now U.S. Pat. No. 6,787,844which is a divisional of U.S. application Ser. No. 09/706,810, filedNov. 7, 2000, now U.S. Pat. No. 6,525,370 which is a divisional of U.S.application Ser. No. 09/317,255, filed May 24, 1999, now abandoned whichis a divisional of U.S. application Ser. No. 08/720,014, filed Sep. 27,1996 now U.S. Pat. No. 5,925,907. Each of the above-referencedapplications is incorporated by reference herein in its entirety.

This application also claims foreign priority to Japanese Appl. No.07-276292, filed Sep. 29, 1995.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a semiconductor deviceincluding a transistor with a composite gate structure and a transistorwith a single gate structure, and to a method for manufacturing such asemiconductor device. More specifically, the present invention relatesto a nonvolatile semiconductor memory device including a nonvolatilememory cell having a composite gate structure of a floating gate and acontrol gate, and a transistor having a single gate structure of only acontrol gate, and also a method for manufacturing such a nonvolatilesemiconductor memory device.

2. Description of the Related Art

Among nonvolatile semiconductor memory devices in which informationstored therein can not be erased even when power sources are turned OFF,the information can be electrically written into the respective memorycells of EPROMs (Electrically Programmable Read-Only Memories), whereasthe information can be electrically written into the respective memorycells as well as can be electrically erased from each of these memorycells in EEPROMs (Electrically Erasable Programmable Read-OnlyMemories).

In general, as a memory cell for such an EPROM and an EEPROM, a MOStransistor with a composite gate structure is employed. The compositegate structure is constituted by stacking a floating gate electrode anda control gate electrode which are made of polycrystalline silicon filmswith an insulating film interposed therebetween. On the other hand, as agate electrode of a single gate structure of another MOS transistorother than the memory cell transistor formed in, for example, aperipheral circuit region, two layers of polycrystalline silicon films,which are made simultaneously with forming of the floating gate and thecontrol gate of the memory cell transistor, are utilized so that thesteps in manufacturing of the transistor can be simplified. Such asemiconductor memory device structure is disclosed in, for instance,JP-A-59-74677, JP-A-7-183411, and JP-A-5-48046.

In JP-A-59-74677, the composite gate containing the floating gate andthe control gate of the memory transistor, and the single gate structureof the peripheral transistor are both formed by three layers of a firstpolycrystalline silicon film, an insulating film, and a secondpolycrystalline silicon film, wherein in the peripheral transistor, thefirst polycrystalline silicon film is electrically connected via anopening fabricated in the insulating film to the second polycrystallinesilicon film in an integral form, so as to provide a structureessentially identical to the gate of the single layer structure.However, the steps in manufacturing the memory device of JP-A-59-74677would be complicated, since the opening must be formed at a preselectedplace of the insulating film located between the first polycrystallinesilicon film and the second polycrystalline silicon film, whichconstitute the gate electrode of the peripheral transistor.

In JP-A-7-183411 and JP-A-5-48046, it is disclosed to form the floatinggate and the control gate of a memory cell transistor by stackingsuccessively the first polycrystalline silicon film, silicon oxide filmand the second polycrystalline silicon film and to form the control gateof the peripheral transistor by stacking the second polycrystallinesilicon film directly on the first polycrystalline silicon film. In sucha case that the composite gate of the memory cell transistor and thegate electrode of the peripheral transistor are both formed of alamination of the first and second polycrystalline silicon films, it isrequired to introduce an impurity such as phosphorous into the first andsecond polycrystalline silicon films thereby reducing the resistance ofthe films, since the films are also used as wiring layers. However, anyof JP-A-7-183411 and JP-A-5-48046 describes nothing about this matter.

On the other hand, JP-A-2-3289 discloses a composite gate of the memorytransistor which is manufactured by successively stacking a firstpolycrystalline silicon film into which phosphorous is doped at a lowconcentration, an interlayer insulating film, and a secondpolycrystalline silicon film into which phosphorous is doped at a highconcentration.

Generally speaking, as a method for introducing an impurity such asphosphorous into the first and second polycrystalline silicon filmsconstituting the floating gate and the control gate, there are an ioninjection method in which accelerated impurity ions are injected intothe polycrystalline silicon films and an vapor phase diffusion method orthermal diffusion method, in which oxyphosphorus chloride is vapored ina furnace, so that phosphorous is diffused from the vapor phase into thepolycrystalline silicon films.

However, in the thermal diffusion method, since the impurityconcentration is determined by the solid solution degree correspondingto the diffusion temperature, it is difficult to introduce the impurityat a low concentration into the polycrystalline silicon film. When theimpurity concentration of the first polycrystalline silicon film of thememory cell transistor is increased, the boundary condition between thegate oxide film and the first polycrystalline silicon film isdeteriorated, and the injection or extraction of electrons into or fromthe first polycrystalline silicon film of the floating gate can not beuniformly carried out, so that the memory cells fail to operate understable condition.

On the other hand, in the ion injection method, it is difficult due to abreakage of the gate oxide film and/or occurrence of the crystal defectsin the substrate to introduce the impurity into the firstpolycrystalline silicon film by an amount sufficient to lower itsresistance. If the resistance of the first polycrystalline silicon filmis not sufficiently lowered, then the resistance of the gate electrodemade of the first and second polycrystalline silicon films of theperipheral transistor becomes higher. Then, if the resistance of thegate electrode becomes higher, the first polycrystalline silicon film issubjected to depletion state when the voltage is applied to the gateelectrode, so that the threshold voltage of the peripheral transistorbecomes unstable.

In a conventional nonvolatile semiconductor memory device in which botha memory cell transistor and another transistor other than the memorycell transistor have a two-layer polycrystalline silicon film gatestructure, it is difficult to provide the polycrystalline silicon filmof the under layer with an impurity concentration which satisfies thenecessary condition of the memory cell transistor, as well as thecondition required for the another transistor other than the memory celltransistor.

Further, the memory device of JP-A-59-74677 has a problem that since thefirst and second polycrystalline silicon films constituting the gateelectrode disposed at an active region in the region for formingperipheral transistors are connected with each other through the openingformed at a predetermined position in the insulating film interposedtherebetween, the impurities, if contained at a high concentration inthe second polycrystalline silicon film, may be diffused into the firstpolycrystalline silicon film through the opening thereby deterioratingthe boundary condition between the gate oxide film and the firstpolycrystalline silicon film.

SUMMARY OF THE INVENTION

An object of the present invention is to provide such a semiconductordevice containing a first transistor having a composite gate structure,and a second transistor having a single gate structure. In thissemiconductor device, each of the composite gate structure and thesingle gate structure is fabricated by a lamination of a firstpolycrystalline silicon film and a second polycrystalline silicon film.Also, an impurity concentration of the first polycrystalline siliconfilm for constructing the above-described composite gate structure, andan impurity concentration of the first polycrystalline silicon film forconstituting the single gate structure can be controlled independentlyof each other.

According to one aspect of the present invention, a semiconductor devicecomprises: a first transistor having a composite gate structurecontaining a lamination of a first polycrystalline silicon film, aninterlayer insulating film, and a second polycrystalline silicon film;and a second transistor having a single gate structure containing alamination of a third polycrystalline silicon film and a fourthpolycrystalline silicon film, wherein said first polycrystalline siliconfilm and said third polycrystalline silicon film have substantially thesame thickness; said second polycrystalline silicon film and said fourthpolycrystalline silicon film have substantially the same thickness; saidfirst polycrystalline silicon film and said third polycrystallinesilicon film have different impurity concentrations controlledindependently of each other; and said second polycrystalline siliconfilm, said fourth polycrystalline silicon film, and said thirdpolycrystalline silicon film have substantially the same impurityconcentration.

In a preferred embodiment of the present invention, the impurityconcentration of said first polycrystalline silicon film is 1×10¹⁸ to1×10¹⁹ atoms/cm³, and the impurity concentration of said thirdpolycrystalline silicon film is 1×10²⁰ to 1×10²¹ atoms/cm³.

According to another aspect of the present invention, a semiconductordevice comprises: a first transistor having a composite gate structurecontaining a lamination of a first conductive film, an insulating film,and a second conductive film; and a second transistor having a singlegate structure containing a third conductive film; wherein said secondconductive film and said third conductive film have substantially thesame conductivity; said third conductive film has a thicknesssubstantially the same as a total of a thickness of said firstconductive film and a thickness of said second conductive film, or atotal of a thickness of said first conductive film, a thickness of saidinsulating film, and a thickness of said second conductive film; andsaid first conductive film has a conductivity different from any one ofa conductivity of said second conductive film and that of said thirdconductive film.

Furthermore, according to another aspect of the present invention, asemiconductor device comprises: a first transistor having a compositegate structure containing a lamination of a first conductive film, aninsulating film formed on said first conductive film, and a secondconductive film formed on said insulating film and having a conductivitydifferent from that of said first conductive film; and a secondtransistor having a single gate structure containing a third conductivefilm having substantially the same conductivity as that of said secondconductive film, and also having substantially the same thickness as atotal of a film thickness of said first conductive film and a filmthickness of said second conductive film, or a total of a thickness ofsaid first conductive film, a thickness of said insulating film, and athickness of said second conductive film.

According to one aspect of the present invention, a method formanufacturing a semiconductor device including a first transistor havinga composite gate structure and a second transistor having a single gatestructure, comprises the steps of: forming a first insulating film on asurface of a first region of a semiconductor substrate and forming asecond insulating film on a surface of a second region of thesemiconductor substrate; forming a first polycrystalline silicon filmover an entire surface of said semiconductor substrate; introducing animpurity at a first predetermined concentration into said firstpolycrystalline silicon film by ion injection; patterning said firstpolycrystalline silicon film to a predetermined shape in said firstregion; forming a third insulating film containing at least a siliconnitride film on at least said first region except for said second regionof said semiconductor substrate; forming a second polycrystallinesilicon film over an entire surface of said semiconductor substrate;introducing an impurity at a second predetermined concentration higherthan said first concentration into said second polycrystalline siliconfilm by thermal-diffusion; patterning a lamination of said secondpolycrystalline silicon film, said third insulating film, and said firstpolycrystalline silicon film into a predetermined pattern in said firstregion to thereby fabricate said composite gate structure of said firsttransistor; and patterning a lamination of said first polycrystallinesilicon film and said second polycrystalline silicon film into apredetermined pattern in said second region to thereby fabricate saidsingle gate structure of said second transistor.

Moreover, according to another aspect of the present invention, a methodfor manufacturing a semiconductor device including a first transistorhaving a composite gate structure and a second transistor having asingle gate structure, comprises the steps of: forming a firstinsulating film on a surface of an active region disposed in a firstregion of a semiconductor substrate and a second insulating film on asurface of an active region disposed in a second region of thesubstrate; forming a first conductive film over an entire surface ofsaid semiconductor substrate; introducing an impurity at a firstpredetermined concentration into said first conductive film byion-injection; forming a third insulating film above said firstconductive film at an area including at least said first region exceptfor said second region, or an area including at least said first regionand said active region of said second region except for an elementisolation region of said second region; forming a conductive film overthe entire surface of said semiconductor substrate; introducing animpurity at a predetermined second concentration higher than said firstconcentration into said second conductive film by thermal diffusion;patterning a lamination of said second conductive film, said thirdinsulating film, and said first conductive film into a predeterminedpattern to thereby fabricate said composite gate structure of said firsttransistor in the active region of said first region; and patterning alamination of said first conductive film and said second conductive filminto a predetermined pattern to thereby fabricate said single gatestructure of said second transistor in the active region of said secondregion.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1H are sectional views at the respective steps of a methodfor manufacturing a semiconductor device according to an embodiment ofthe present invention;

FIGS. 2A and 2B are sectional views of gate electrode portions of amemory cell transistor and a peripheral transistor in the semiconductordevice of the present invention;

FIGS. 3A and 3B are a sectional view and a plan view, of a peripheraltransistor in a semiconductor device manufactured by a method accordingto a second embodiment of the present invention; and

FIG. 4 shows a section of a peripheral transistor according to a thirdembodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring now to FIGS. 1A through 1H, method for manufacturing an EEPROM(Electrically Erasable Read-Only Memory), according to a firstembodiment of the present invention, will be described. In each of FIG.1A to FIG. 1H, the left-sided portion represents a memory celltransistor formed in the memory cell region, whereas the right-sidedportion shows a MOS transistor (peripheral transistor) fabricated in theperipheral circuit region.

First, to manufacture the EEPROM according to the first embodiment, asillustrated in FIG. 1A, a field oxide film 2 having a thickness of anorder of 500 nm is formed on a surface of a silicon substrate 1 by theLOCOS method to provide an element isolation region. Then, a tunneloxide film 3 having a thickness of an order of 10 to 12 nm is fabricatedon the silicon substrate 1 at a memory cell region in an active regionsurrounded by the element isolation region made of the field oxide film2 by way of the thermal oxidation method. Thereafter, a gate oxide film4 having a thickness of an order of 10 to 40 nm is formed on the siliconsubstrate 1 at a peripheral circuit region in the active regionsurrounded by the field oxide film 2 by the thermal oxidation method. Itshould be noted that the tunnel oxide film 3 and the gate oxide film 4may be formed in a reversed order or at the same time.

Next, as illustrated in FIG. 1B, a polycrystalline silicon film 5 havinga substantially uniform thickness of an order of 150 nm is formed overthe entire surface by the CVD method.

Subsequently, as indicated in FIG. 1C, phosphorus is introduced by theion injection method into the polycrystalline silicon film 5 at animpurity concentration of an order of 1×10¹⁸ to 1×10¹⁹ atoms/cm³. It isundesired that the impurity concentration in the polycrystalline siliconfilm 5 exceeds the above impurity concentration, because the boundarycondition between the tunnel oxide film 3 and the polycrystallinesilicon film 5 in the memory cell region is deteriorated, so thatelectrons are no more uniformly injected into or extracted from thepolycrystalline silicon film 5 serving as the floating gate. It shouldbe noted that instead of phosphorous, arsenic ions may be injected.

Next, as shown in FIG. 10, the polycrystalline silicon film 5 in thememory cell region is patterned to form a floating gate.

Thereafter, as indicated in FIG. 1E, an ONO film (silicon oxidefilm/silicon nitride film/silicon oxide film) 6 is formed over theentire surface by the CVD method. A thickness of each of the two siliconoxide film layers for constituting this ONO film 6 is in an order of 10nm, a thickness of the silicon nitride film is in an order of 20 nm, andthus an overall thickness of the ONO film 6, as converted to anequivalent thickness of the oxide film, is in an order of 30 nm.

Then, as shown in FIG. 1F, an etching treatment is carried out, whileusing a photoresist (not shown) of a pattern covering the memory cellregion as a mask, so as to remove wholly a portion of the ONO film 6formed on the peripheral circuit region.

Thereafter, as indicated in FIG. 1G, a polycrystalline silicon film 7having a uniform thickness of approximately 150 nm is fabricated overthe entire surface by the CVD method.

Next, as illustrated in FIG. 1H, phosphorous is diffused into thepolycrystalline silicon film 7 by way of the vapor phase diffusionmethod by performing the thermal treatment in a furnace in whichoxyphosphorus chloride (POCl₃: phosphoryl trichloride) is vapored. Thisphosphorous vapor phase diffusion is carried out until the impurityconcentration of the polycrystalline silicon film 7 becomes an order of1×10²⁰ to 1×10²¹ atom/cm³ so that the impurity concentration of thepolycrystalline silicon film 7 becomes at least 10 times that of thepolycrystalline silicon film 5. It should be understood that instead ofphosphorous, arsenic may be diffused.

At this time, since the polycrystalline silicon film 5 is in contactwith the polycrystalline silicon film 7 in the peripheral circuitregion, phosphorous is also diffused from the polycrystalline siliconfilm 7 into the polycrystalline silicon film 5, so that the impurityconcentration of the polycrystalline silicon film 5 becomesapproximately 1×10²⁰ to 1×10²¹ atoms/cm³. On the other hand, the ONOfilm 6 containing the silicon nitride film which has a low diffusionspeed of phosphorous is interposed between the polycrystalline siliconfilms 5 and in the memory cell region. As a result, phosphorous does notdiffuse through the ONO film 6 into the polycrystalline silicon film 5in the memory cell region. Accordingly, the impurity concentration ofthe polycrystalline silicon film 5 in the memory cell region remains atan order of 1×10¹⁸ to 1×10¹⁹ atoms/cm³.

Subsequently, after photoresist (not shown) has been coated over theentire surface, this photoresist is patterned to a shape of a controlgate 15 of the memory cell transistor 11 (see FIG. 2A) in the memorycell region, and also a shape of a gate electrode 16 of a peripheraltransistor 12 (see FIG. 2B) in the peripheral circuit region. Then, byusing the patterned photoresist as a mask, an anisotropic etching iscarried out with respect to the polycrystalline silicon film 7, the ONOfilm 6, and the polycrystalline silicon film 5. As a result, a floatinggate made of the polycrystalline silicon film 5, and a control gate madeof the polycrystalline silicon film 7 are fabricated in the memory cellregion, whereas a gate electrode of the peripheral transistor, which ismade of the polycrystalline silicon films 5 and 7, is formed in theperipheral circuit region.

Thereafter, a step of forming impurity diffusion layers (not shown)serving as sources and drains of the memory cell transistor 11 and theperipheral transistor 12, by ion-injection using the control gate andthe gate electrode as a mask, and further a step of forming aninterlayer insulating film (not shown) which covers the overall areas ofthe memory cell transistor 11 and the peripheral transistor 12 arecarried out to thereby accomplish the EEPROM.

As described above, in accordance with this first embodiment,phosphorous is introduced into the polycrystalline silicon film 5 at arelatively low concentration by way of the ion injection method and theONO film 6 is left at least on the polycrystalline silicon film 5 of thememory cell region. Therefore, when phosphorous is introduced at arelatively high concentration into the polycrystalline silicon film 7 byway of the vapor phase diffusion method, the silicon nitride film of theONO film 6 functions as a diffusion stopper of phosphorous. As aconsequence, the impurity concentration of the polycrystalline siliconfilm 5 of the memory cell region can be maintained at a relatively lowlevel, and further the impurity concentration of the polycrystallinesilicon film 5 of the peripheral circuit region can be set to therelatively high level.

In this embodiment, the polycrystalline silicon films 5, 7 forming thegate electrode of the peripheral transistor, and the polycrystallinesilicon film 7 forming the control gate of the memory transistor havesubstantially the same conductivity which is higher than theconductivity of the polycrystalline silicon film 5 forming the floatinggate of the memory transistor. Also, since the polycrystalline siliconfilms 5 and 7 have essentially uniform sectional areas, each of thepolycrystalline silicon films 5, 7 forming the gate electrode of theperipheral transistor, and the polycrystalline silicon film 7 formingthe control gate of the memory transistor have substantially the sameresistance.

As a consequence, the boundary between the tunnel oxide film 3 of thememory cell transistor 11 and the polycrystalline silicon film 5 can bemaintained at better condition, and furthermore, the resistance of thegate electrode of the peripheral transistor 12 can be made sufficientlylow. As a result, it is possible to manufacture an EEPROM having highreliability and capable of operating at high speed.

It should also be noted that in this embodiment, the ONO film 6 formedin the peripheral circuit region is completely removed in the step ofFIG. 1F. Alternatively, the ONO film 6 fabricated in the peripheralcircuit region may be partially removed so as to retain its portiondisposed at a region where the peripheral transistor is formed. Also, inthis case, since phosphorous which has been introduced by the vaporphase diffusion method is diffused into the polycrystalline silicon film5 through a portion where the ONO film 6 was removed, the impurityconcentration of the polycrystalline silicon film 5 of the peripheralcircuit region can be set to a relatively high concentration. Moreover,in this case, since the film structure of the memory cell transistor 11in the longitudinal direction is substantially identical to the filmstructure of the peripheral transistor 12 in the longitudinal direction,the workability can be advantageously improved in the step of formingthe floating gate by applying anisotropic etching to the polycrystallinesilicon film 7, the ONO film 6 and the polycrystalline silicon film 5.

Also, in this embodiment, the description has been made of a case wherean MOS transistor which is formed at the same time with the memory celltransistor 11 is the MOS transistor 12 of the peripheral circuit region.Alternatively, this embodiment may be applied to such a case that, forinstance, the selecting transistor selectively switching the memory celltransistor 11 in the EEPROM is fabricated at the same time with thememory cell transistor 11. Moreover, this embodiment may be applied notonly to manufacturing of the EEPROM, but also any nonvolatilesemiconductor memory device such as an EPROM in which each of the memorycell transistor and other transistors than the memory cell transistoruses a two-layer polycrystalline silicon film structure.

Next, a second embodiment of the present invention will be explainedwith reference to FIGS. 3A and 3B. FIG. 3A shows a section of a portionincluding the gate electrode of a peripheral transistor in a step of themethod of manufacturing a semiconductor device according to the secondembodiment of the present invention, i.e. a section along the line IIIAto IIIA′ in FIG. 3B, which is a plan view of the region including theperipheral transistor in the second embodiment.

In the second embodiment, substantially the same steps as those in thefirst embodiment as shown in FIGS. 1A to 1E are carried out. The secondembodiment is different from the first embodiment in the step of FIG.1F. In the first embodiment, the ONO film disposed in the region wherethe peripheral transistor is formed has been removed in the step of FIG.1F. On the other hand, in the second embodiment, only a part of the ONOfilm disposed in the element-isolation region where the field oxide film2 is formed is removed, while unremoving a part of the ONO film disposedin the region 23 as shown in FIG. 3B including the active region 21where the peripheral transistor is formed by masking the region 23.Therefore, in the second embodiment, a part of the ONO film disposed onthe first polycrystalline silicon film of the peripheral transistor andat an area substantially above the active region is unremoved in thestep corresponding to FIG. 1F of the first embodiment. As a result, inthe step of FIG. 1H where the impurity ions are introduced into thepolycrystalline silicon film 7, the impurity ions are not introducedinto a portion 5 a (FIG. 3B) of the polycrystalline silicon film 5disposed on the active region so that the impurity concentration of theportion 5 a remains at a low level and its resistance remains at a highlevel. However, a portion 5 b of the polycrystalline silicon film 5disposed over the field oxide film 5 and serving as a wiring of the gateelectrode has substantially the same impurity concentration as that ofthe polycrystalline silicon film 7, resulting in a low resistance of theportion 5 b, which is effective to prevent the delay in operation of itscircuit. Further, due to the same reason as that in the case of thetunnel oxide.

Incidentally, in FIG. 3B, 19 indicates the source/drain region of aperipheral transistor, 24 or 25 indicates a contact hole for connectingthe source/drain region to a wiring layer (not shown) and 22 indicates acontact hole for connecting the gate electrode of the peripheraltransistor to a wiring layer (not shown).

As previously described, according to the present invention, since theimpurity is introduced at a relatively low concentration into the firstpolycrystalline silicon film by ion-implantation and also the insulatingfilm containing the silicon nitride film is left on the polycrystallinesilicon film in the memory cell region, when phosphorous is introducedat a relatively high concentration into the second polycrystallinesilicon film by way of the thermal diffusion method, the silicon nitridefilm functions as a stopper for diffusion of the impurity. As aconsequence, the impurity concentration of the first polycrystallinesilicon film of the memory cell region can be maintained at a relativelylow level, and further the impurity concentration of the firstpolycrystalline silicon film of the peripheral transistor can be set toa relatively high level.

As a result, the boundary between the tunnel oxide film (firstinsulating film) of the memory cell transistor formed in the memory cellregion and the first polycrystalline silicon film can be maintained atbetter condition, and furthermore, the resistance of the gate electrodewiring of the MOS transistor formed in the peripheral region can be madesufficiently low. As a result, it is possible to manufacture anonvolatile semiconductor memory device having high reliability andcapable of operating at high speed.

1. A method for manufacturing a semiconductor device including a firsttransistor having a composite gate structure and a second transistorhaving a single gate structure, said method comprising the steps of:forming a first insulating film on a surface of a first region of asemiconductor substrate and forming a second insulating film on asurface of a second region of said semiconductor substrate; forming afirst polycrystalline silicon film over an entire surface of saidsemiconductor substrate; introducing an impurity at a firstpredetermined concentration into said first polycrystalline silicon filmby ion injection; patterning said first polycrystalline silicon filminto a predetermined shape in said first region; forming a thirdinsulating film containing at least a silicon nitride film on at leastsaid first region except for said second region of said semiconductorsubstrate; forming a second polycrystalline silicon film over the entiresurface of said semiconductor substrate; introducing an impurity at asecond predetermined concentration higher than said first concentrationinto said second polycrystalline silicon film by thermal diffusion; andpatterning a lamination of said second polycrystalline silicon film,said third insulating film and said first polycrystalline silicon filminto a predetermined shape in said first region thereby forming saidcomposite gate structure of said first transistor and a lamination ofsaid first polycrystalline silicon film and said second polycrystallinesilicon film into a predetermined shape in said second region therebyforming said single gate structure of said second transistor.
 2. Amethod as claimed in claim 1, wherein said first impurity concentrationis 1×10¹⁸ to 1×10¹⁹ atoms/cm³, and said second impurity concentration is1×10²⁰ to 1×10²¹ atoms/cm³.
 3. A method as claimed in claim 1 whereinsaid third insulating film is an ONO film containing a silicon oxidefilm, a silicon nitride film and a silicon oxide film.
 4. A method formanufacturing a semiconductor device including a first transistor havinga composite gate structure and a second transistor having a single gatestructure, said method comprising the steps of: forming a firstinsulating film on a surface of an active region of a first region of asemiconductor substrate and forming a second insulating film on asurface of an active region of a second region of the semiconductorsubstrate; forming a first polycrystalline silicon film over an entiresurface of said semiconductor substrate; introducing an impurity at afirst predetermined concentration into said first polycrystallinesilicon film by ion injection; patterning said first polycrystallinesilicon film into a predetermined shape in said active region of thefirst region; forming a third insulating film containing at least asilicon nitride film on at least said first region and said activeregion of the second region except for an element isolation region ofsaid second region of said semiconductor substrate; forming a secondpolycrystalline silicon film over the entire surface of saidsemiconductor substrate; introducing an impurity at a secondpredetermined concentration higher than said first concentration intosaid second polycrystalline silicon film by thermal diffusion method;and patterning a lamination of said second polycrystalline silicon film,said third insulating film, and said first polycrystalline silicon filminto a predetermined shape in said active region of the first regionthereby forming said composite gate structure of said first transistor;and a lamination of said first polycrystalline silicon film, said thirdinsulating film and said second polycrystalline silicon film into apredetermined shape in said active region of the second region therebyforming said single gate structure of said second transistor.
 5. Amethod as claimed in claim 4, wherein said first impurity concentrationis 1×10¹⁸ to 1×10¹⁹ atoms/cm³, and the second impurity concentration is1×10²⁰ to 1×10²¹ atoms/cm³.
 6. A method as claimed in claim 4, wherein:said third insulating film is an ONO film containing a silicon oxidefilm, a silicon nitride film, and a silicon oxide film.
 7. A method asclaimed in claim 4, further comprising the steps of forming aninterlayer insulating film just above said second polycrystallinesilicon film in said active region of said second region, forming acontact hole to penetrate at least said interlayer insulating film andforming a wiring layer on said interlayer insulating film so as to beconnected through said control hole to said second polycrystallinesilicon film.
 8. A method for manufacturing a semiconductor deviceincluding a first transistor having a composite gate structure and asecond transistor having a single gate structure, said method comprisingthe steps of: forming a first insulating film on a surface of an activeregion in a first region of a semiconductor substrate and forming asecond insulating film on a surface of an active region in a secondregion of said semiconductor substrate; forming a first conductive filmover an entire surface of said semiconductor substrate; introducing animpurity at a first predetermined concentration into said firstconductive film by ion injection; forming a third insulating film abovesaid first conductive film at least on said first region except for saidsecond region; forming a second conductive film over the entire surfaceof said semiconductor substrate; introducing an impurity at a secondpredetermined concentration higher than said first concentration intosaid second conductive film by thermal diffusion; and patterning alamination of said second conductive film, said third insulating film,and said first conductive film into a predetermined shape in said firstregion thereby forming said composite gate structure of said firsttransistor; and a lamination of said first conductive film and saidsecond conductive film into a predetermined shape in said second regionthereby forming said single gate structure of said second transistor. 9.A method as claimed in claim 8, wherein said third insulating filmincludes a nitride film.
 10. A method as claimed in claim 8, whereinsaid third insulating film is a multilayer insulating film containing atleast an oxide film and a nitride film.
 11. A method as claimed in claim8, wherein each of said first conductive film and said second conductivefilm is made of a material containing silicon.
 12. A method as claimedin claim 11, wherein said first impurity concentration is 1×10¹⁸ to1×10¹⁹ atoms/cm³, and said second impurity concentration is 1×10²⁰ to1×10²¹ atoms/cm³.
 13. A method for manufacturing a semiconductor deviceincluding a first transistor having a composite gate structure and asecond transistor having a single gate structure, said method comprisingthe steps of: forming a first insulating film on a surface of an activeregion in a first region of a semiconductor substrate and forming asecond insulating film on a surface of an active region in a secondregion of said semiconductor substrate; forming a first conductive filmover an entire surface of said semiconductor substrate; introducing animpurity at a first predetermined concentration into said firstconductive film by ion injection; forming a third insulating film abovesaid first conductive film, on at least said first region and the activeregion of said second region except for an element isolation region ofsaid second region; forming a second conductive film over the entiresurface of said semiconductor substrate; introducing an impurity at asecond predetermined concentration higher than said first concentrationinto said second conductive film by thermal diffusion; and patterning alamination of said second conductive film, said third insulating filmand said first conductive film into a predetermined shape in the activeregion of said first region thereby forming said composite gatestructure of said first transistor; and a lamination of said firstconductive film, said third insulating film and said second conductivefilm into a predetermined shape in said second region thereby formingsaid single gate structure of said second transistor.
 14. A method asclaimed in claim 13, wherein said step of forming the single gatestructure of said second transistor includes a substep of patterning thelamination of said second conductive film, said third insulating filmand said first conductive film into a predetermined shape in the activeregion of said second region; and patterning a lamination of said secondconductive film and said first conductive film into a predeterminedshape in said element isolating region of said second region.
 15. Amethod as claimed in claim 13, wherein said third insulating filmincludes a nitride film.
 16. A method as claimed in claim 13, whereinsaid third insulating film is a multilayer insulating film containing atleast an oxide film and a nitride film.
 17. A method as claimed in claim13, wherein each of said first conductive film and said secondconductive film is made of a material containing silicon.
 18. A methodas claimed in claim 13, wherein said first impurity concentration is1×10¹⁸ to 1×10¹⁹ atoms/cm³, and said second impurity concentration is1×10²⁰ to 1×10²¹ atoms/cm³.
 19. A method as claimed in claim 13, furthercomprising the steps of forming, after forming said single gatestructure of said second transistor, an interlayer insulating film justabove said second conductive film of said single gate structure; forminga contact hole in said interlayer insulating film so as to reach saidsecond conductive film of said single gate structure but not to exceedthe third insulating film thereof and forming a wiring layer on saidinterlayer insulating film, said wiring layer being electricallyconnected through said contact hole to said second conductive film ofsaid single gate structure.